Optically detected electron paramagnetic resonance of arsenic antisites in low-temperature GaAs layers
Arsenic antisites in GaAs layers grown by molecular-beam epitaxy at low substrate temperatures (∼200 °C) were observed using electron paramagnetic resonance (EPR), magnetic circular dichroism in absorption (MCDA), and MCDA-detected EPR. This observation confirms that there is a MCDA band directly as...
Gespeichert in:
| Veröffentlicht in: | Applied physics letters 1992-02, Vol.60 (6), p.718-720 |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 720 |
|---|---|
| container_issue | 6 |
| container_start_page | 718 |
| container_title | Applied physics letters |
| container_volume | 60 |
| creator | SUN, H.-J WATKINS, G. D RONG, F. C FOTIADIS, L POINDEXTER, E. H |
| description | Arsenic antisites in GaAs layers grown by molecular-beam epitaxy at low substrate temperatures (∼200 °C) were observed using electron paramagnetic resonance (EPR), magnetic circular dichroism in absorption (MCDA), and MCDA-detected EPR. This observation confirms that there is a MCDA band directly associated with arsenic antisites in the GaAs layers. |
| doi_str_mv | 10.1063/1.106548 |
| format | Article |
| fullrecord | <record><control><sourceid>pascalfrancis_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_106548</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>5099012</sourcerecordid><originalsourceid>FETCH-LOGICAL-c320t-b8aaa07f848f9254377209d94967c101bedb39e2dbf60002c5717705cac173513</originalsourceid><addsrcrecordid>eNo9kEFLxDAQhYMouK6CPyEHD16qmaRpmuOy6Cos7EXPZZpOpNJtSxKR_fdmWdnTY4aPB-9j7B7EE4hKPcMxdFlfsAUIYwoFUF-yhRBCFZXVcM1uYvzOp5ZKLZjfzal3OAwH3lEil6jjNOQM08hnDLjHr5EywgPFacTREZ88xxBpzE8cUx_7RJH3Ix-m3yLRfqaA6ScQ3-Aq8gEPFOItu_I4RLr7zyX7fH35WL8V293mfb3aFk5JkYq2RkRhfF3W3kpdKmOksJ0tbWUcCGipa5Ul2bW-yhOk0waMEdqhA6M0qCV7PPW6MMUYyDdz6PcYDg2I5uingebkJ6MPJ3TGmAX4kLf18cxrYa0Aqf4An3BlFA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Optically detected electron paramagnetic resonance of arsenic antisites in low-temperature GaAs layers</title><source>AIP Digital Archive</source><creator>SUN, H.-J ; WATKINS, G. D ; RONG, F. C ; FOTIADIS, L ; POINDEXTER, E. H</creator><creatorcontrib>SUN, H.-J ; WATKINS, G. D ; RONG, F. C ; FOTIADIS, L ; POINDEXTER, E. H</creatorcontrib><description>Arsenic antisites in GaAs layers grown by molecular-beam epitaxy at low substrate temperatures (∼200 °C) were observed using electron paramagnetic resonance (EPR), magnetic circular dichroism in absorption (MCDA), and MCDA-detected EPR. This observation confirms that there is a MCDA band directly associated with arsenic antisites in the GaAs layers.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.106548</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville, NY: American Institute of Physics</publisher><subject>Color centers and other defects ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Electron paramagnetic resonance and relaxation ; Exact sciences and technology ; Magnetic resonances and relaxations in condensed matter, mössbauer effect ; Physics</subject><ispartof>Applied physics letters, 1992-02, Vol.60 (6), p.718-720</ispartof><rights>1992 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c320t-b8aaa07f848f9254377209d94967c101bedb39e2dbf60002c5717705cac173513</citedby><cites>FETCH-LOGICAL-c320t-b8aaa07f848f9254377209d94967c101bedb39e2dbf60002c5717705cac173513</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=5099012$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>SUN, H.-J</creatorcontrib><creatorcontrib>WATKINS, G. D</creatorcontrib><creatorcontrib>RONG, F. C</creatorcontrib><creatorcontrib>FOTIADIS, L</creatorcontrib><creatorcontrib>POINDEXTER, E. H</creatorcontrib><title>Optically detected electron paramagnetic resonance of arsenic antisites in low-temperature GaAs layers</title><title>Applied physics letters</title><description>Arsenic antisites in GaAs layers grown by molecular-beam epitaxy at low substrate temperatures (∼200 °C) were observed using electron paramagnetic resonance (EPR), magnetic circular dichroism in absorption (MCDA), and MCDA-detected EPR. This observation confirms that there is a MCDA band directly associated with arsenic antisites in the GaAs layers.</description><subject>Color centers and other defects</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Electron paramagnetic resonance and relaxation</subject><subject>Exact sciences and technology</subject><subject>Magnetic resonances and relaxations in condensed matter, mössbauer effect</subject><subject>Physics</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1992</creationdate><recordtype>article</recordtype><recordid>eNo9kEFLxDAQhYMouK6CPyEHD16qmaRpmuOy6Cos7EXPZZpOpNJtSxKR_fdmWdnTY4aPB-9j7B7EE4hKPcMxdFlfsAUIYwoFUF-yhRBCFZXVcM1uYvzOp5ZKLZjfzal3OAwH3lEil6jjNOQM08hnDLjHr5EywgPFacTREZ88xxBpzE8cUx_7RJH3Ix-m3yLRfqaA6ScQ3-Aq8gEPFOItu_I4RLr7zyX7fH35WL8V293mfb3aFk5JkYq2RkRhfF3W3kpdKmOksJ0tbWUcCGipa5Ul2bW-yhOk0waMEdqhA6M0qCV7PPW6MMUYyDdz6PcYDg2I5uingebkJ6MPJ3TGmAX4kLf18cxrYa0Aqf4An3BlFA</recordid><startdate>19920210</startdate><enddate>19920210</enddate><creator>SUN, H.-J</creator><creator>WATKINS, G. D</creator><creator>RONG, F. C</creator><creator>FOTIADIS, L</creator><creator>POINDEXTER, E. H</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19920210</creationdate><title>Optically detected electron paramagnetic resonance of arsenic antisites in low-temperature GaAs layers</title><author>SUN, H.-J ; WATKINS, G. D ; RONG, F. C ; FOTIADIS, L ; POINDEXTER, E. H</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c320t-b8aaa07f848f9254377209d94967c101bedb39e2dbf60002c5717705cac173513</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1992</creationdate><topic>Color centers and other defects</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Electron paramagnetic resonance and relaxation</topic><topic>Exact sciences and technology</topic><topic>Magnetic resonances and relaxations in condensed matter, mössbauer effect</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>SUN, H.-J</creatorcontrib><creatorcontrib>WATKINS, G. D</creatorcontrib><creatorcontrib>RONG, F. C</creatorcontrib><creatorcontrib>FOTIADIS, L</creatorcontrib><creatorcontrib>POINDEXTER, E. H</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>SUN, H.-J</au><au>WATKINS, G. D</au><au>RONG, F. C</au><au>FOTIADIS, L</au><au>POINDEXTER, E. H</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Optically detected electron paramagnetic resonance of arsenic antisites in low-temperature GaAs layers</atitle><jtitle>Applied physics letters</jtitle><date>1992-02-10</date><risdate>1992</risdate><volume>60</volume><issue>6</issue><spage>718</spage><epage>720</epage><pages>718-720</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Arsenic antisites in GaAs layers grown by molecular-beam epitaxy at low substrate temperatures (∼200 °C) were observed using electron paramagnetic resonance (EPR), magnetic circular dichroism in absorption (MCDA), and MCDA-detected EPR. This observation confirms that there is a MCDA band directly associated with arsenic antisites in the GaAs layers.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.106548</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 1992-02, Vol.60 (6), p.718-720 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_106548 |
| source | AIP Digital Archive |
| subjects | Color centers and other defects Condensed matter: electronic structure, electrical, magnetic, and optical properties Electron paramagnetic resonance and relaxation Exact sciences and technology Magnetic resonances and relaxations in condensed matter, mössbauer effect Physics |
| title | Optically detected electron paramagnetic resonance of arsenic antisites in low-temperature GaAs layers |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-04T19%3A01%3A57IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Optically%20detected%20electron%20paramagnetic%20resonance%20of%20arsenic%20antisites%20in%20low-temperature%20GaAs%20layers&rft.jtitle=Applied%20physics%20letters&rft.au=SUN,%20H.-J&rft.date=1992-02-10&rft.volume=60&rft.issue=6&rft.spage=718&rft.epage=720&rft.pages=718-720&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.106548&rft_dat=%3Cpascalfrancis_cross%3E5099012%3C/pascalfrancis_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |