Optically detected electron paramagnetic resonance of arsenic antisites in low-temperature GaAs layers

Arsenic antisites in GaAs layers grown by molecular-beam epitaxy at low substrate temperatures (∼200 °C) were observed using electron paramagnetic resonance (EPR), magnetic circular dichroism in absorption (MCDA), and MCDA-detected EPR. This observation confirms that there is a MCDA band directly as...

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Veröffentlicht in:	Applied physics letters 1992-02, Vol.60 (6), p.718-720
Hauptverfasser:	SUN, H.-J, WATKINS, G. D, RONG, F. C, FOTIADIS, L, POINDEXTER, E. H
Format:	Artikel
Sprache:	eng
Schlagworte:	Color centers and other defects Condensed matter: electronic structure, electrical, magnetic, and optical properties Electron paramagnetic resonance and relaxation Exact sciences and technology Magnetic resonances and relaxations in condensed matter, mössbauer effect Physics
Online-Zugang:	Volltext
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Zusammenfassung:	Arsenic antisites in GaAs layers grown by molecular-beam epitaxy at low substrate temperatures (∼200 °C) were observed using electron paramagnetic resonance (EPR), magnetic circular dichroism in absorption (MCDA), and MCDA-detected EPR. This observation confirms that there is a MCDA band directly associated with arsenic antisites in the GaAs layers.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.106548