Effect of helium dilution during plasma-enhanced deposition on electron trapping in silicon dioxide thin films

The effect of helium dilution during plasma-enhanced chemical vapor deposition (PECVD) of silicon dioxide thin films was studied with avalanche injection and charge trapping techniques. It is shown that, while oxides deposited with He dilution can have low bulk trap densities, they are not lower tha...

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Veröffentlicht in:	Applied physics letters 1992-02, Vol.60 (6), p.695-697
Hauptverfasser:	PARK, Y. C, JOHNSON, N. M, JACKSON, W. B, STEVENS, K. S, SMITH, D. L, HAGSTROM, S. B
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport phenomena in thin films and low-dimensional structures Exact sciences and technology Physics
Online-Zugang:	Volltext
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Zusammenfassung:	The effect of helium dilution during plasma-enhanced chemical vapor deposition (PECVD) of silicon dioxide thin films was studied with avalanche injection and charge trapping techniques. It is shown that, while oxides deposited with He dilution can have low bulk trap densities, they are not lower than films deposited without He dilution. We thus present a more complete specification than previously available of the range of gas-phase deposition conditions that produce device-grade silicon dioxide.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.106540