TEMPERATURE-DEPENDENCE OF GAAS-ALGAAS VERTICAL CAVITY SURFACE EMITTING LASERS
The temperature performance of GaAs-AlGaAs vertical cavity surface emitting lasers has been studied from 60 to - 160-degrees-C. A minimum threshold current occurs considerably below room-temperature where the wavelength of the Fabry-Perot resonance of the cavity matches the wavelength of the maximum...
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Veröffentlicht in: | Applied physics letters 1992-02, Vol.60 (6), p.683-685 |
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description | The temperature performance of GaAs-AlGaAs vertical cavity surface emitting lasers has been studied from 60 to - 160-degrees-C. A minimum threshold current occurs considerably below room-temperature where the wavelength of the Fabry-Perot resonance of the cavity matches the wavelength of the maximum gain of the active region. The laser quantum efficiency increases for decreasing temperature, exhibiting a change of slope near the temperature of the threshold minimum. |
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A minimum threshold current occurs considerably below room-temperature where the wavelength of the Fabry-Perot resonance of the cavity matches the wavelength of the maximum gain of the active region. 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A minimum threshold current occurs considerably below room-temperature where the wavelength of the Fabry-Perot resonance of the cavity matches the wavelength of the maximum gain of the active region. The laser quantum efficiency increases for decreasing temperature, exhibiting a change of slope near the temperature of the threshold minimum.</description><subject>Exact sciences and technology</subject><subject>Fundamental areas of phenomenology (including applications)</subject><subject>Lasers</subject><subject>Optics</subject><subject>Physical Sciences</subject><subject>Physics</subject><subject>Physics, Applied</subject><subject>Science & Technology</subject><subject>Semiconductor lasers; laser diodes</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1992</creationdate><recordtype>article</recordtype><sourceid>EZCTM</sourceid><recordid>eNqN0E1Lw0AQBuBFFKxV8Cfk4EGQ6M5uPjbHJd20gfSDJC14Csl2FyI1KdmI-O9NiPTsXF4GnpnDi9Aj4FfAHn2DMVzqXaEZYN-3KQC7RjOMMbW9wIVbdGfMx7C6hNIZWudivRMpz_epsBdiJzYLsQmFtY2sJeeZzZMxrINI8zjkiRXyQ5y_W9k-jfjAxDrO83iztBKeiTS7Rze6PBn18JdztI9EHq7sZLscz21JCeltAC0l08AIrY5OCVQR6mLiOBJL5ijAIMGTVAZEssp1sVcxFYA6-lpTFVBF5-h5-iu71phO6eLc1Z9l91MALsYaCiimGgb6NNFzaWR50l3ZyNpcvAs4YOAM7GVi36pqtZG1aqS6KA5BQFYhI3gcf9Ds_zqs-7Kv2yZsv5qe_gJOJHT1</recordid><startdate>19920210</startdate><enddate>19920210</enddate><creator>TELL, B</creator><creator>BROWNGOEBELER, KF</creator><creator>LEIBENGUTH, RE</creator><creator>BAEZ, FM</creator><creator>LEE, YH</creator><general>Amer Inst Physics</general><general>American Institute of Physics</general><scope>BLEPL</scope><scope>DTL</scope><scope>EZCTM</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19920210</creationdate><title>TEMPERATURE-DEPENDENCE OF GAAS-ALGAAS VERTICAL CAVITY SURFACE EMITTING LASERS</title><author>TELL, B ; BROWNGOEBELER, KF ; LEIBENGUTH, RE ; BAEZ, FM ; LEE, YH</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c322t-11fcc8f1823bd4a13e2350244c0c84e101c16c3c92c8b5506b8e91ed7ff3e93e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1992</creationdate><topic>Exact sciences and technology</topic><topic>Fundamental areas of phenomenology (including applications)</topic><topic>Lasers</topic><topic>Optics</topic><topic>Physical Sciences</topic><topic>Physics</topic><topic>Physics, Applied</topic><topic>Science & Technology</topic><topic>Semiconductor lasers; laser diodes</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>TELL, B</creatorcontrib><creatorcontrib>BROWNGOEBELER, KF</creatorcontrib><creatorcontrib>LEIBENGUTH, RE</creatorcontrib><creatorcontrib>BAEZ, FM</creatorcontrib><creatorcontrib>LEE, YH</creatorcontrib><collection>Web of Science Core Collection</collection><collection>Science Citation Index Expanded</collection><collection>Web of Science - Science Citation Index Expanded - 1992</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>TELL, B</au><au>BROWNGOEBELER, KF</au><au>LEIBENGUTH, RE</au><au>BAEZ, FM</au><au>LEE, YH</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>TEMPERATURE-DEPENDENCE OF GAAS-ALGAAS VERTICAL CAVITY SURFACE EMITTING LASERS</atitle><jtitle>Applied physics letters</jtitle><stitle>APPL PHYS LETT</stitle><date>1992-02-10</date><risdate>1992</risdate><volume>60</volume><issue>6</issue><spage>683</spage><epage>685</epage><pages>683-685</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>The temperature performance of GaAs-AlGaAs vertical cavity surface emitting lasers has been studied from 60 to - 160-degrees-C. A minimum threshold current occurs considerably below room-temperature where the wavelength of the Fabry-Perot resonance of the cavity matches the wavelength of the maximum gain of the active region. The laser quantum efficiency increases for decreasing temperature, exhibiting a change of slope near the temperature of the threshold minimum.</abstract><cop>WOODBURY</cop><pub>Amer Inst Physics</pub><doi>10.1063/1.106536</doi><tpages>3</tpages></addata></record> |
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source | Web of Science - Science Citation Index Expanded - 1992<img src="https://exlibris-pub.s3.amazonaws.com/fromwos-v2.jpg" />; AIP Digital Archive |
subjects | Exact sciences and technology Fundamental areas of phenomenology (including applications) Lasers Optics Physical Sciences Physics Physics, Applied Science & Technology Semiconductor lasers laser diodes |
title | TEMPERATURE-DEPENDENCE OF GAAS-ALGAAS VERTICAL CAVITY SURFACE EMITTING LASERS |
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