TEMPERATURE-DEPENDENCE OF GAAS-ALGAAS VERTICAL CAVITY SURFACE EMITTING LASERS

The temperature performance of GaAs-AlGaAs vertical cavity surface emitting lasers has been studied from 60 to - 160-degrees-C. A minimum threshold current occurs considerably below room-temperature where the wavelength of the Fabry-Perot resonance of the cavity matches the wavelength of the maximum...

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Veröffentlicht in:Applied physics letters 1992-02, Vol.60 (6), p.683-685
Hauptverfasser: TELL, B, BROWNGOEBELER, KF, LEIBENGUTH, RE, BAEZ, FM, LEE, YH
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container_issue 6
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container_title Applied physics letters
container_volume 60
creator TELL, B
BROWNGOEBELER, KF
LEIBENGUTH, RE
BAEZ, FM
LEE, YH
description The temperature performance of GaAs-AlGaAs vertical cavity surface emitting lasers has been studied from 60 to - 160-degrees-C. A minimum threshold current occurs considerably below room-temperature where the wavelength of the Fabry-Perot resonance of the cavity matches the wavelength of the maximum gain of the active region. The laser quantum efficiency increases for decreasing temperature, exhibiting a change of slope near the temperature of the threshold minimum.
doi_str_mv 10.1063/1.106536
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source Web of Science - Science Citation Index Expanded - 1992<img src="https://exlibris-pub.s3.amazonaws.com/fromwos-v2.jpg" />; AIP Digital Archive
subjects Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Physical Sciences
Physics
Physics, Applied
Science & Technology
Semiconductor lasers
laser diodes
title TEMPERATURE-DEPENDENCE OF GAAS-ALGAAS VERTICAL CAVITY SURFACE EMITTING LASERS
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