TEMPERATURE-DEPENDENCE OF GAAS-ALGAAS VERTICAL CAVITY SURFACE EMITTING LASERS

TEMPERATURE-DEPENDENCE OF GAAS-ALGAAS VERTICAL CAVITY SURFACE EMITTING LASERS

The temperature performance of GaAs-AlGaAs vertical cavity surface emitting lasers has been studied from 60 to - 160-degrees-C. A minimum threshold current occurs considerably below room-temperature where the wavelength of the Fabry-Perot resonance of the cavity matches the wavelength of the maximum...

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Veröffentlicht in:Applied physics letters 1992-02, Vol.60 (6), p.683-685
Hauptverfasser: TELL, B, BROWNGOEBELER, KF, LEIBENGUTH, RE, BAEZ, FM, LEE, YH
Format: Artikel
Sprache:eng
Schlagworte:
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Physical Sciences
Physics
Physics, Applied
Science & Technology
Semiconductor lasers
laser diodes
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Zusammenfassung:The temperature performance of GaAs-AlGaAs vertical cavity surface emitting lasers has been studied from 60 to - 160-degrees-C. A minimum threshold current occurs considerably below room-temperature where the wavelength of the Fabry-Perot resonance of the cavity matches the wavelength of the maximum gain of the active region. The laser quantum efficiency increases for decreasing temperature, exhibiting a change of slope near the temperature of the threshold minimum.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.106536