High contrast ratio asymmetric Fabry-Perot reflection light modulator based on GaAs/InGaAs multiple quantum wells

We report the realization of both high contrast ratio (66:1) and dynamic range (30%) at room temperature in a strained GaAs/InGaAs(100) multiple quantum well based asymmetric Fabry–Perot reflection modulator. The p-i-n configuration modulator also acts as a photodetector and exhibits a high quantum...

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Veröffentlicht in:	Applied physics letters 1991-08, Vol.59 (9), p.1108-1110
Hauptverfasser:	KEZHONG HU, LI CHEN, ANUPAM MADHUKAR, PING CHEN, RAJKUMAR, K. C, KIAN KAVIANI, ZAHEED KARIM, KYRIAKAKIS, C, TANGUAY, A. R
Format:	Artikel
Sprache:	eng
Schlagworte:	Exact sciences and technology Fundamental areas of phenomenology (including applications) Optical elements, devices, and systems Optical processors, correlators, and modulators Optics Physics
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Zusammenfassung:	We report the realization of both high contrast ratio (66:1) and dynamic range (30%) at room temperature in a strained GaAs/InGaAs(100) multiple quantum well based asymmetric Fabry–Perot reflection modulator. The p-i-n configuration modulator also acts as a photodetector and exhibits a high quantum efficiency (∼80%).
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.106359