Undoped semi-insulating InP by high-pressure annealing

Undoped semi-insulating (SI) InP wafers were obtained by high-temperature annealing under high phosphorus over pressure. These wafers show resistivities higher than 107 Ω cm, with mobilities greater than 4000 cm2 V−1 s−1. The SI properties could be held even after cap annealing with SiNx films at 70...

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Veröffentlicht in:	Applied physics letters 1991-08, Vol.59 (8), p.932-934
Hauptverfasser:	KAINOSHO, K, SHIMAKURA, H, YAMAMOTO, H, ODA, O
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductivity of specific materials Electronic transport in condensed matter Exact sciences and technology Physics
Online-Zugang:	Volltext
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Zusammenfassung:	Undoped semi-insulating (SI) InP wafers were obtained by high-temperature annealing under high phosphorus over pressure. These wafers show resistivities higher than 107 Ω cm, with mobilities greater than 4000 cm2 V−1 s−1. The SI properties could be held even after cap annealing with SiNx films at 700 °C for 15 min. The activation energy of deep levels causing the semi-insulation was estimated as 0.64 eV. Photoluminescence measurements made on undoped SI InP show hitherto unknown peaks in the long wavelength region between 1000 and 1400 nm.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.106305