Mechanisms of phase transitions in ion-doped silicon layers

A model is suggested for amorphization of Si layers under ion bombardment and also for recrystallization of amorphous layers subjected to heat or radiation-heat treatment. The model is based on regularities governing the kinetics of solid-phase chemical reactions. The amorphization rate is shown to be determined by the divacancy formation rate, while the recrystallization rate by the rate of formation of Si two-atoms complexes at the amorphous layer-crystal matrix interface.