Strain relaxation and compensation due to annealing in heavily carbon-doped GaAs

Heavily C-doped GaAs grown by atmospheric pressure metalorganic vapor phase epitaxy using CCl4 as the C-dopant source has been annealed to study the stability of C acceptors at very high doping levels (p=1018–1020 cm−3). In layers with initial hole densities p≳6×1019 cm−3, 5 min anneals at temperatu...

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Veröffentlicht in:Applied physics letters 1991-10, Vol.59 (16), p.2001-2003
Hauptverfasser: HANNA, M. C, MAJERFELD, A, SZMYD, D. M
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Sprache:eng
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Zusammenfassung:Heavily C-doped GaAs grown by atmospheric pressure metalorganic vapor phase epitaxy using CCl4 as the C-dopant source has been annealed to study the stability of C acceptors at very high doping levels (p=1018–1020 cm−3). In layers with initial hole densities p≳6×1019 cm−3, 5 min anneals at temperatures ranging from 700 to 850 °C under arsine overpressure caused a significant reduction in the hole density, lattice contraction and photoluminescence intensity, and a smaller reduction in the mobility. For lower doped material, annealing has little effect on the as-grown properties. These changes in the material properties indicate that a compensating recombination center is formed during annealing. Possible compensation mechanisms which explain partially the annealing effects in very heavily C-doped GaAs are analyzed. The results of this study show that there is an upper limit on the hole concentration of p≳6×1019 cm−3 in annealed GaAs:C.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.106167