Subpicosecond carrier lifetime in GaAs grown by molecular beam epitaxy at low temperatures

Epitaxial GaAs grown by molecular beam epitaxy (MBE) at low substrate temperatures is observed to have a significantly shorter carrier lifetime than GaAs grown at normal substrate temperatures. Using femtosecond time-resolved-reflectance techniques, a sub-picosecond (

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Bibliographische Detailangaben
Veröffentlicht in:	Applied physics letters 1991-12, Vol.59 (25), p.3276-3278
Hauptverfasser:	GUPTA, S, FRANKEL, M. Y, VALDAMANIS, J. A, WHITAKER, J. F, MOUROU, G. A, SMITH, F. W, CALAWA, A. R
Format:	Artikel
Sprache:	eng
Schlagworte:	Charge carriers: generation, recombination, lifetime, and trapping Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductivity phenomena in semiconductors and insulators Electronic transport in condensed matter Exact sciences and technology Physics
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	Epitaxial GaAs grown by molecular beam epitaxy (MBE) at low substrate temperatures is observed to have a significantly shorter carrier lifetime than GaAs grown at normal substrate temperatures. Using femtosecond time-resolved-reflectance techniques, a sub-picosecond (
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.105729