High detectivity InGaAs base infrared hot-electron transistor

An infrared hot-electron transistor with a thin (300 Å)InGaAs base layer is constructed. By adopting a thin base material with a large Γ-L valley separation, the photocurrent transfer ratio is improved by a factor of four in comparison with the GaAs base transistor. As a result, the detectivity of t...

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Veröffentlicht in:Applied physics letters 1991-12, Vol.59 (25), p.3303-3305
Hauptverfasser: CHOI, K. K, FOTIADIS, L, TAYSING-LARA, M, CHANG, W, IAFRATE, G. J
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Sprache:eng
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Zusammenfassung:An infrared hot-electron transistor with a thin (300 Å)InGaAs base layer is constructed. By adopting a thin base material with a large Γ-L valley separation, the photocurrent transfer ratio is improved by a factor of four in comparison with the GaAs base transistor. As a result, the detectivity of the transistor is increased to 1.4×1010 cm√Hz/W at 77 K with a cutoff wavelength of 9.5 μm, two times as large as the companion state-of-the-art GaAs quantum well photoconductor. Combined with the lower dark current, the voltage responsivity and the noise equivalent temperature difference of a detector array can be improved by more than an order of magnitude.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.105713