Reactive ion etching of SiGe alloys using HBr

Reactive ion etching of SiGe alloys using HBr

We have studied reactive ion etching of Si1−xGex alloys with x≤0.15 and Ge in HBr plasmas. The etch rate of SiGe increases monotonically with the Ge content of the alloy and for a Si85Ge15 alloy was ≂50% greater than for Si. Etch profiles are identical to those formed in singe-crystal Si. X-ray phot...

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Veröffentlicht in:Applied physics letters 1991-07, Vol.59 (3), p.336-338
Hauptverfasser: BESTWICK, T. D, OEHRLEIN, G. S, YING ZHANG, KROESEN, G. M. W, DE FRESART, E
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Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Mechanical and acoustical properties
adhesion
Physics
Solid surfaces and solid-solid interfaces
Solid-fluid interfaces
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
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container_end_page 338
container_issue 3
container_start_page 336
container_title Applied physics letters
container_volume 59
creator BESTWICK, T. D
OEHRLEIN, G. S
YING ZHANG
KROESEN, G. M. W
DE FRESART, E
description We have studied reactive ion etching of Si1−xGex alloys with x≤0.15 and Ge in HBr plasmas. The etch rate of SiGe increases monotonically with the Ge content of the alloy and for a Si85Ge15 alloy was ≂50% greater than for Si. Etch profiles are identical to those formed in singe-crystal Si. X-ray photoelectron spectroscopy studies shown that the surface of the etched SiGe alloys are depleted in Ge and consist of about one monolayer of brominated Si over the alloy.
doi_str_mv 10.1063/1.105588
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subjects Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Mechanical and acoustical properties
adhesion
Physics
Solid surfaces and solid-solid interfaces
Solid-fluid interfaces
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
title Reactive ion etching of SiGe alloys using HBr
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