Reactive ion etching of SiGe alloys using HBr

Reactive ion etching of SiGe alloys using HBr

We have studied reactive ion etching of Si1−xGex alloys with x≤0.15 and Ge in HBr plasmas. The etch rate of SiGe increases monotonically with the Ge content of the alloy and for a Si85Ge15 alloy was ≂50% greater than for Si. Etch profiles are identical to those formed in singe-crystal Si. X-ray phot...

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Veröffentlicht in:Applied physics letters 1991-07, Vol.59 (3), p.336-338
Hauptverfasser: BESTWICK, T. D, OEHRLEIN, G. S, YING ZHANG, KROESEN, G. M. W, DE FRESART, E
Format: Artikel
Sprache:eng
Schlagworte:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Mechanical and acoustical properties
adhesion
Physics
Solid surfaces and solid-solid interfaces
Solid-fluid interfaces
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
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Zusammenfassung:We have studied reactive ion etching of Si1−xGex alloys with x≤0.15 and Ge in HBr plasmas. The etch rate of SiGe increases monotonically with the Ge content of the alloy and for a Si85Ge15 alloy was ≂50% greater than for Si. Etch profiles are identical to those formed in singe-crystal Si. X-ray photoelectron spectroscopy studies shown that the surface of the etched SiGe alloys are depleted in Ge and consist of about one monolayer of brominated Si over the alloy.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.105588