X-ray rocking curve measurement of composition and strain in Si-Ge buffer layers grown on Si substrates

The level of strain and the fraction of Ge in SiGe layers grown on Si can be found rapidly and unambiguously using double-crystal x-ray diffraction and a simple application of the linear elasticity theory combined with Vegard’s law. The method gives excellent results for 0.4-μm-thick buffer layers o...

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Veröffentlicht in:	Applied physics letters 1991-02, Vol.58 (8), p.825-827
Hauptverfasser:	FATEMI, M, STAHLBUSH, R. E
Format:	Artikel
Sprache:	eng
Schlagworte:	Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of crystal growth physics of crystal growth Physics
Online-Zugang:	Volltext
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