X-ray rocking curve measurement of composition and strain in Si-Ge buffer layers grown on Si substrates

The level of strain and the fraction of Ge in SiGe layers grown on Si can be found rapidly and unambiguously using double-crystal x-ray diffraction and a simple application of the linear elasticity theory combined with Vegard’s law. The method gives excellent results for 0.4-μm-thick buffer layers o...

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Veröffentlicht in:Applied physics letters 1991-02, Vol.58 (8), p.825-827
Hauptverfasser: FATEMI, M, STAHLBUSH, R. E
Format: Artikel
Sprache:eng
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Zusammenfassung:The level of strain and the fraction of Ge in SiGe layers grown on Si can be found rapidly and unambiguously using double-crystal x-ray diffraction and a simple application of the linear elasticity theory combined with Vegard’s law. The method gives excellent results for 0.4-μm-thick buffer layers of SiGe/Si containing 5%–50% germanium. It is shown that lattice relaxation rises abruptly at x(Ge)≥15%, and that some strain remains for x(Ge) as high as 50%.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.104501