Refractive index changes in a GaAs multiple quantum well structure produced by impurity-induced disordering using boron and fluorine

The effect of boron and fluorine impurity-induced disordering on the refractive index of AlxGa1−xAs multiple quantum well waveguides has been studied experimentally using a grating coupler formed in low-index material. Substantial changes ≳1% in the refractive index, were obtained in partially disordered material over the measured wavelength range. Fluorine was found to produce larger changes than boron for similar annealing conditions.