Photoluminescence study of sulfide layers on p-type InP

The emission spectra from sulfurized p-InP annealed at temperatures below 300 °C are compared with those from untreated samples annealed under the same conditions. The unsulfurized samples show a VP related emission band at 1.14 eV whose intensity increases linearly with annealing temperature. The s...

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Veröffentlicht in:	Applied physics letters 1990-12, Vol.57 (25), p.2678-2679
Hauptverfasser:	LEONELLI, R, SUNDARARAMAN, C. S, CURRIE, J. F
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Physics
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Zusammenfassung:	The emission spectra from sulfurized p-InP annealed at temperatures below 300 °C are compared with those from untreated samples annealed under the same conditions. The unsulfurized samples show a VP related emission band at 1.14 eV whose intensity increases linearly with annealing temperature. The sulfurized samples exhibit an emission band at 0.94 eV attributed to a SP deep level. Both bands disappear when a layer of 20 Å is chemically removed. This shows that both VP and SP formation is limited to a few atomic surface layers.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.103798