High power output 1.48-1.51 μm continuously graded index separate confinement strained quantum well lasers

A record high power output strained-layer InGaAs/InP quantum well laser emitting at 1.48 to 1.51 μm is demonstrated. Maximum cw output as high as 206 mW is obtained from a sample with a cavity length of 890 μm and a facet reflectivity of ∼5 and 85% for the front and the rear facets, respectively. Th...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Applied physics letters 1990-07, Vol.57 (3), p.224-226
Hauptverfasser:	TANBUN-EK, T, LOGAN, R. A, OLSSON, N. A, TEMKIN, H, SERGENT, A. M, WECHT, K. W
Format:	Artikel
Sprache:	eng
Schlagworte:	Beam characteristics: profile, intensity, and power spatial pattern formation Exact sciences and technology Fundamental areas of phenomenology (including applications) Laser optical systems: design and operation Optics Physics
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A record high power output strained-layer InGaAs/InP quantum well laser emitting at 1.48 to 1.51 μm is demonstrated. Maximum cw output as high as 206 mW is obtained from a sample with a cavity length of 890 μm and a facet reflectivity of ∼5 and 85% for the front and the rear facets, respectively. The laser has a threshold of 30 mA and a slope efficiency as high as 0.4 mW/mA.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.103722