Electric field screening by photogenerated holes in multiple quantum wells : a new mechanism for absorption saturation

We observe saturation in the electroabsorption of InGaAs/InP multiple quantum wells (MQWs) at high optical intensity. Contrary to the mechanism for zero-field MQWs, we find that saturation occurs due to the presence of trapped photogenerated holes that screen the MQWs from the applied electric field...

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Veröffentlicht in:	Applied physics letters 1990-09, Vol.57 (11), p.1081-1083
Hauptverfasser:	WOOD, T. H, PASTALAN, J. Z, BURRUS, C. A, JOHNSON, B. C, MILLER, B. I, DEMIGUEL, J. L, KOREN, U, YOUNG, M. G
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Physics
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Zusammenfassung:	We observe saturation in the electroabsorption of InGaAs/InP multiple quantum wells (MQWs) at high optical intensity. Contrary to the mechanism for zero-field MQWs, we find that saturation occurs due to the presence of trapped photogenerated holes that screen the MQWs from the applied electric field. By carefully measuring the absorption coefficient of the wells and the emission time for holes, we are able to fit the observed electroabsorption saturation with no adjustable parameters.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.103539