Diffusion of hydrogen in low-pressure chemical vapor deposited silicon nitride films

Hydrogen transport in low-pressure chemical vapor deposited Si3N4 has been investigated using samples consisting of a double layer of hydrogenated and deuterated nitride films. Concentration depth profiles of hydrogen and deuterium were measured using elastic recoil detection. Diffusion coefficients...

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Veröffentlicht in:	Applied physics letters 1990-06, Vol.56 (25), p.2530-2532
Hauptverfasser:	BIK, W. M. A, LINSSEN, R. N. H, HABRAKEN, F. H. P. M, VAN DER WEG, W. F, KUIPER, A. E. T
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Diffusion in solids Diffusion of impurities Exact sciences and technology Physics Transport properties of condensed matter (nonelectronic)
Online-Zugang:	Volltext
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