Diffusion of hydrogen in low-pressure chemical vapor deposited silicon nitride films
Hydrogen transport in low-pressure chemical vapor deposited Si3N4 has been investigated using samples consisting of a double layer of hydrogenated and deuterated nitride films. Concentration depth profiles of hydrogen and deuterium were measured using elastic recoil detection. Diffusion coefficients...
Gespeichert in:
Veröffentlicht in: | Applied physics letters 1990-06, Vol.56 (25), p.2530-2532 |
---|---|
Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | Hydrogen transport in low-pressure chemical vapor deposited Si3N4 has been investigated using samples consisting of a double layer of hydrogenated and deuterated nitride films. Concentration depth profiles of hydrogen and deuterium were measured using elastic recoil detection. Diffusion coefficients for D were derived from the deuterium concentration depth profiles before and after annealing at temperatures in the range 700–1000 °C. The diffusion coefficient is characterized by an activation energy of 2.94 eV for the entire temperature range. Its value varies between 10−17 cm2/s at 700 °C and 5×10−14 cm2/s at 1000 °C. |
---|---|
ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.103261 |