Diffusion of hydrogen in low-pressure chemical vapor deposited silicon nitride films

Hydrogen transport in low-pressure chemical vapor deposited Si3N4 has been investigated using samples consisting of a double layer of hydrogenated and deuterated nitride films. Concentration depth profiles of hydrogen and deuterium were measured using elastic recoil detection. Diffusion coefficients...

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Veröffentlicht in:Applied physics letters 1990-06, Vol.56 (25), p.2530-2532
Hauptverfasser: BIK, W. M. A, LINSSEN, R. N. H, HABRAKEN, F. H. P. M, VAN DER WEG, W. F, KUIPER, A. E. T
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Sprache:eng
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Zusammenfassung:Hydrogen transport in low-pressure chemical vapor deposited Si3N4 has been investigated using samples consisting of a double layer of hydrogenated and deuterated nitride films. Concentration depth profiles of hydrogen and deuterium were measured using elastic recoil detection. Diffusion coefficients for D were derived from the deuterium concentration depth profiles before and after annealing at temperatures in the range 700–1000 °C. The diffusion coefficient is characterized by an activation energy of 2.94 eV for the entire temperature range. Its value varies between 10−17 cm2/s at 700 °C and 5×10−14 cm2/s at 1000 °C.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.103261