Molecular field-effect transistors using conducting polymer Langmuir-Blodgett films

Molecular field-effect transistors using conducting polymer Langmuir-Blodgett films

Thin-film field-effect transistors (FETs) have been prepared using poly(3-hexylthiophene)/ arachidic acid and quinquethiophene/arachidic acid Langmuir–Blodgett (LB) films with thicknesses ranging from a monolayer to some ten monolayers. The effect of the number of layers on the mobility and conducti...

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Veröffentlicht in:Applied physics letters 1990-03, Vol.56 (12), p.1157-1159
Hauptverfasser: PALOHEIMO, J, KUIVALAINEN, P, STUBB, H, VUORIMAA, E, YLI-LAHTI, P
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Zusammenfassung:Thin-film field-effect transistors (FETs) have been prepared using poly(3-hexylthiophene)/ arachidic acid and quinquethiophene/arachidic acid Langmuir–Blodgett (LB) films with thicknesses ranging from a monolayer to some ten monolayers. The effect of the number of layers on the mobility and conductivity has been studied. This is to our knowledge the first demonstration of a LB FET utilizing organic semiconductors as the active material.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.103182