Nanometer resolution in luminescence microscopy of III-V heterostructures

In a scanning tunneling microscope experiment, the luminescence induced by the recombination of holes with electrons tunneling into cleaved (110) GaAs/AlGaAs heterostructures is used to image the interface region with nanometer resolution.

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Bibliographische Detailangaben
Veröffentlicht in:	Applied physics letters 1990-04, Vol.56 (16), p.1564-1566
Hauptverfasser:	ABRAHAM, D. L, VEIDER, A, SCHÖNENBERGER, C, MEIER, H. P, ARENT, D. J, ALVARADO, S. F
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electron density of states and band structure of crystalline solids Electron states Exact sciences and technology Physics
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	In a scanning tunneling microscope experiment, the luminescence induced by the recombination of holes with electrons tunneling into cleaved (110) GaAs/AlGaAs heterostructures is used to image the interface region with nanometer resolution.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.103154