Identification of silicon nitride/InGaAs interface states

Identification of silicon nitride/InGaAs interface states

Electrical characterization of the SiNx/InGaAs and SiNx/Si interfaces was carried out by high-frequency capacitance-voltage (C-V) measurements (1 MHz). Two impurity levels, regardless of substrate nature, have been identified and attributed to silicon dangling bond defects, such as 3/4 Si0 and 3/4 S...

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Veröffentlicht in:Applied physics letters 1990-04, Vol.56 (17), p.1661-1663
Hauptverfasser: PICCIRILLO, A, GOBBI, A. L, FERRARIS, M, GIANNETTI, R, BAGNOLI, P. E
Format: Artikel
Sprache:eng
Schlagworte:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Physics
Surface and interface electron states
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Zusammenfassung:Electrical characterization of the SiNx/InGaAs and SiNx/Si interfaces was carried out by high-frequency capacitance-voltage (C-V) measurements (1 MHz). Two impurity levels, regardless of substrate nature, have been identified and attributed to silicon dangling bond defects, such as 3/4 Si0 and 3/4 Si−. Electron spin resonance measurements, carried out both at room temperature and at 77 K, confirmed the presence of defects such as 3/4 Si0 surrounded by Si bonds.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.103109