Zinc-stimulated outdiffusion of iron in InP

High-resistivity InP (108 Ω cm) can be grown by means of metal organic vapor phase epitaxy using ferrocene as a dopant source. Adjacent zinc-doped layers of InP annihilate the resistivity of the (intentionally) iron-doped InP. The presence of Zn dramatically enhances outdiffusion of iron out off int...

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Veröffentlicht in:	Applied physics letters 1990-01, Vol.56 (2), p.146-147
Hauptverfasser:	YOUNG, E. W. A, FONTIJN, G. M
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical interdiffusion diffusion barriers Condensed matter: structure, mechanical and thermal properties Diffusion in solids Exact sciences and technology Physics Transport properties of condensed matter (nonelectronic)
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	High-resistivity InP (108 Ω cm) can be grown by means of metal organic vapor phase epitaxy using ferrocene as a dopant source. Adjacent zinc-doped layers of InP annihilate the resistivity of the (intentionally) iron-doped InP. The presence of Zn dramatically enhances outdiffusion of iron out off intentionally iron-doped layers of InP into the Zn-doped InP. Diffusion of Zn into the iron-doped InP is also observed.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.103058