Photoinduced electric fields in type II heterostructures
Specially designed structures have been grown in the GaAs/GaAlAs/AlAs system, in order to get a spatial separation of photocreated electrons and holes and thus modify the band profile under illumination in a nonstandard way. The photoinduced electric field is measured by the Stark Shift of the probi...
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| Veröffentlicht in: | Applied physics letters 1990-06, Vol.56 (24), p.2422-2424 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | Specially designed structures have been grown in the GaAs/GaAlAs/AlAs system, in order to get a spatial separation of photocreated electrons and holes and thus modify the band profile under illumination in a nonstandard way. The photoinduced electric field is measured by the Stark Shift of the probing quantum well luminescence. Fields as high as 25 kV/cm are obtained under 100 W/cm2 cw illumination. |
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| ISSN: | 0003-6951 1077-3118 |
| DOI: | 10.1063/1.102897 |