Strain mapping in[111] and [001] InGaAs/GaAs superlattices

Raman area maps measuring the strain in lattice-mismatched [111] and [001] oriented InxGa1−xAs/GaAs superlattices (x=0.1, 0.17) are presented and compared with independent x-ray rocking curve studies of the average strain in the same samples. We find that the LO phonon frequency, but not the TO freq...

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Veröffentlicht in:	Applied physics letters 1990-01, Vol.56 (3), p.286-287
Hauptverfasser:	VENKATESWARAN, U. D, CUI, L. J, LI, M, WEINSTEIN, B. A, ELCESS, K, FONSTAD, C. G, MAILHIOT, C
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties)
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Beschreibung
Zusammenfassung:	Raman area maps measuring the strain in lattice-mismatched [111] and [001] oriented InxGa1−xAs/GaAs superlattices (x=0.1, 0.17) are presented and compared with independent x-ray rocking curve studies of the average strain in the same samples. We find that the LO phonon frequency, but not the TO frequency, is a valid measure of strain for [111] oriented superlattices exhibiting one-mode behavior. This is explained by the lack of compensation between the effects of alloying and strain for the TO mode in InxGa1−xAs. The capability to nondestructively map small growth variations in superlattice and buffer layer constituents is demonstrated.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.102810