Film thickness dependence of dislocation density reduction in GaAs-on-Si substrates

Film thickness dependence of dislocation density reduction in GaAs-on-Si substrates

Low dislocation density (4×105 cm−2) GaAs films on Si substrates have been obtained with a GaAs film thickness of 180 μm using vapor mixing epitaxy based on GaCl-AsH3 (hydride) vapor phase epitaxy for the first time. Dislocation density decreases as the GaAs film thickness increases. Dislocation den...

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Veröffentlicht in:Applied physics letters 1990-01, Vol.56 (5), p.484-486
Hauptverfasser: TACHIKAWA, M, YAMAGUCHI, M
Format: Artikel
Sprache:eng
Schlagworte:
Condensed matter: structure, mechanical and thermal properties
Defects and impurities in crystals
microstructure
Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
Exact sciences and technology
Physics
Structure of solids and liquids
crystallography
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Zusammenfassung:Low dislocation density (4×105 cm−2) GaAs films on Si substrates have been obtained with a GaAs film thickness of 180 μm using vapor mixing epitaxy based on GaCl-AsH3 (hydride) vapor phase epitaxy for the first time. Dislocation density decreases as the GaAs film thickness increases. Dislocation density is inversely proportional to film thickness in the film thickness region of 50 μm (and/or of dislocation density
ISSN:0003-6951
1077-3118
DOI:10.1063/1.102773