Optimum Si-Si1− x Ge x structures with strong infrared spectra
We have identified symmetrically strained Si-Si1−xGex superlattices with optimum strength infrared spectra in the range 50–300 meV. The growth structure parameters required for implementing such systems are provided.
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Veröffentlicht in: | Applied physics letters 1990-02, Vol.56 (8), p.767-769 |
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Hauptverfasser: | , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | We have identified symmetrically strained Si-Si1−xGex superlattices with optimum strength infrared spectra in the range 50–300 meV. The growth structure parameters required for implementing such systems are provided. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.102708 |