Wafer fusion : a novel technique for optoelectronic device fabrication and monolithic integration

Centimeter-size single-crystal InP or GaAs wafers have been fused together entirely, face to face or side by side, after a heat treatment in a graphite/quartz reactor which can press the wafers together through differential thermal expansion. Diodes formed by fusing p- and n-type wafers showed norma...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Applied physics letters 1990-02, Vol.56 (8), p.737-739
Hauptverfasser:	LIAU, Z. L, MULL, D. E
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Microelectronic fabrication (materials and surfaces technology) Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	Centimeter-size single-crystal InP or GaAs wafers have been fused together entirely, face to face or side by side, after a heat treatment in a graphite/quartz reactor which can press the wafers together through differential thermal expansion. Diodes formed by fusing p- and n-type wafers showed normal current-voltage characteristics and light emission. Fusion between lattice-mismatched wafers (i.e., InP and GaAs) has also been demonstrated.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.102697