Magnetoresistance measurements of doping symmetry and strain effects in GaSb-AlSb quantum wells

We have made the first magnetotransport measurements of two-dimensional holes confined to GaSb in modulation-doped AlSb/GaSb heterostructures. The Shubnikov–de Haas oscillations in GaSb-AlSb heterostructures reflect the influence of strain as well as the symmetry of the confinement potential on the...

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Veröffentlicht in:	Applied physics letters 1990, Vol.56 (1), p.81-83
Hauptverfasser:	HANSEN, W, SMITH, T. P. III, PIAO, J, BERESFORD, R, WANG, W. I
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in interface structures Exact sciences and technology Physics
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Zusammenfassung:	We have made the first magnetotransport measurements of two-dimensional holes confined to GaSb in modulation-doped AlSb/GaSb heterostructures. The Shubnikov–de Haas oscillations in GaSb-AlSb heterostructures reflect the influence of strain as well as the symmetry of the confinement potential on the hole levels. We have also observed the quantized Hall effect in asymmetric single quantum wells.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.102659