Study of the interface of undoped and p-doped ZnSe with GaAs and AlAs
We have used electrolyte electroreflectance (EER) to characterize ZnSe/GaAs and ZnSe/AlAs interfaces. The great sensitivity of EER to interface space-charge regions enabled us to detect both interface crossover transitions and transitions to triangular-well interface states. The observation of these...
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| Veröffentlicht in: | Applied physics letters 1990, Vol.56 (1), p.42-44 |
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| container_issue | 1 |
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| container_title | Applied physics letters |
| container_volume | 56 |
| creator | KASSEL, L ABAD, H GARLAND, J. W RACCAH, P. M POTTS, J. E HAASE, M. A CHENG, H |
| description | We have used electrolyte electroreflectance (EER) to characterize ZnSe/GaAs and ZnSe/AlAs interfaces. The great sensitivity of EER to interface space-charge regions enabled us to detect both interface crossover transitions and transitions to triangular-well interface states. The observation of these transitions provides the first unambiguous proof that the ZnSe/GaAs interface is type I and allowed us to determine the band offsets and band bendings, the diffusion lengths across each interface, and the amount of interdiffusion. |
| doi_str_mv | 10.1063/1.102641 |
| format | Article |
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The great sensitivity of EER to interface space-charge regions enabled us to detect both interface crossover transitions and transitions to triangular-well interface states. The observation of these transitions provides the first unambiguous proof that the ZnSe/GaAs interface is type I and allowed us to determine the band offsets and band bendings, the diffusion lengths across each interface, and the amount of interdiffusion.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.102641</doi><tpages>3</tpages></addata></record> |
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| ispartof | Applied physics letters, 1990, Vol.56 (1), p.42-44 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_102641 |
| source | AIP Digital Archive |
| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Physics Surface and interface electron states |
| title | Study of the interface of undoped and p-doped ZnSe with GaAs and AlAs |
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