Study of the interface of undoped and p-doped ZnSe with GaAs and AlAs

We have used electrolyte electroreflectance (EER) to characterize ZnSe/GaAs and ZnSe/AlAs interfaces. The great sensitivity of EER to interface space-charge regions enabled us to detect both interface crossover transitions and transitions to triangular-well interface states. The observation of these...

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Veröffentlicht in:	Applied physics letters 1990, Vol.56 (1), p.42-44
Hauptverfasser:	KASSEL, L, ABAD, H, GARLAND, J. W, RACCAH, P. M, POTTS, J. E, HAASE, M. A, CHENG, H
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Physics Surface and interface electron states
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Zusammenfassung:	We have used electrolyte electroreflectance (EER) to characterize ZnSe/GaAs and ZnSe/AlAs interfaces. The great sensitivity of EER to interface space-charge regions enabled us to detect both interface crossover transitions and transitions to triangular-well interface states. The observation of these transitions provides the first unambiguous proof that the ZnSe/GaAs interface is type I and allowed us to determine the band offsets and band bendings, the diffusion lengths across each interface, and the amount of interdiffusion.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.102641