Atomic layer epitaxy of GaInP ordered alloy

We report on the successful growth of ordered GaInP by atomic layer epitaxy on a GaAs substrate. The growth was achieved by alternate exposures to TEI, PH3, TMGa, and PH3 fluxes, and epilayers were found to closely match the GaAs substrate irrespective of the growth conditions. Room-temperature phot...

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Veröffentlicht in:	Applied physics letters 1990-03, Vol.56 (12), p.1172-1174
Hauptverfasser:	MCDERMOTT, B. T, REID, K. G, EL-MASRY, N. A, BEDAIR, S. M, DUNCAN, W. M, YIN, X, POLLAK, F. H
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Solid surfaces and solid-solid interfaces Surface and interface dynamics and vibrations Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
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Beschreibung
Zusammenfassung:	We report on the successful growth of ordered GaInP by atomic layer epitaxy on a GaAs substrate. The growth was achieved by alternate exposures to TEI, PH3, TMGa, and PH3 fluxes, and epilayers were found to closely match the GaAs substrate irrespective of the growth conditions. Room-temperature photoreflectance results indicate a band gap of 1.78 eV, the lowest value yet reported for such ordered alloys. Photoluminescence shows an anomalous temperature dependence behavior and transmission electron microscopy studies indicate that ordering takes place preferentially on (111) alternating planes.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.102553