Reduction of secondary defect formation in MeV B+ ion-implanted Si(100)

MeV ion implantation in Si above a dose of 1014/cm2 leads to secondary defect formation in a buried layer, which is rather stable. Annealing of Si(100) implanted with 2.0 MeV B+ ions to a dose of 2.2×1014/cm2 has been investigated by means of cross-sectional transmission electron microscopy. After a...

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Veröffentlicht in:	Applied physics letters 1989-10, Vol.55 (18), p.1838-1840
Hauptverfasser:	LU, W. X, QIAN, Y. H, TIAN, R. H, WANG, Z. L, SCHREUTELKAMP, R. J, LIEFTING, J. R, SARIS, F. W
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Ion radiation effects Physical radiation effects, radiation damage Physics Structure of solids and liquids crystallography
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Zusammenfassung:	MeV ion implantation in Si above a dose of 1014/cm2 leads to secondary defect formation in a buried layer, which is rather stable. Annealing of Si(100) implanted with 2.0 MeV B+ ions to a dose of 2.2×1014/cm2 has been investigated by means of cross-sectional transmission electron microscopy. After annealing at 900 °C for 15 min, dislocation loops elongated along [110] were found. A remarkable decrease in secondary defect formation has been observed if, in addition, 140 keV Si+ was implanted prior to annealing.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.102181