InGaP/GaAs superlattices grown by gas-source molecular beam epitaxy

Lattice-matched InGaP/GaAs superlattices have been grown by gas-source molecular beam epitaxy. High-resolution images obtained with transmission electron microscopy reveal the superlattices to be free of dislocations and to exhibit smooth interfaces of only 1–2 monolayers in width. Double crystal x-...

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Veröffentlicht in:	Applied physics letters 1989-11, Vol.55 (22), p.2322-2324
Hauptverfasser:	LEE, H. Y, CROOK, M. D, HAFICH, M. J, QUIGLEY, J. H, ROBINSON, G. Y, LI, D, OTSUKA, N
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Solid surfaces and solid-solid interfaces Surface and interface dynamics and vibrations Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
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Beschreibung
Zusammenfassung:	Lattice-matched InGaP/GaAs superlattices have been grown by gas-source molecular beam epitaxy. High-resolution images obtained with transmission electron microscopy reveal the superlattices to be free of dislocations and to exhibit smooth interfaces of only 1–2 monolayers in width. Double crystal x-ray diffraction studies indicate that the narrow interfacial regions are locally strained as a result of the growth sequence during gas-source molecular beam epitaxy.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.102050