Nonlinear viscoelastic dilation of SiO2 films
Oxide dilation in thin films is analyzed using a Voigt viscoelastic model. If stress-dependent viscosity is used to model the dilation, a logarithmic time evolution is predicted. The form of the solution is in agreement with the non-Maxwellian behavior seen in experimental data. The analysis provide...
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| Veröffentlicht in: | Applied physics letters 1989-01, Vol.54 (2), p.151-152 |
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| container_end_page | 152 |
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| container_issue | 2 |
| container_start_page | 151 |
| container_title | Applied physics letters |
| container_volume | 54 |
| creator | RAFFERTY, C. S LANDSBERGER, L. M DUTTON, R. W TILLER, W. A |
| description | Oxide dilation in thin films is analyzed using a Voigt viscoelastic model. If stress-dependent viscosity is used to model the dilation, a logarithmic time evolution is predicted. The form of the solution is in agreement with the non-Maxwellian behavior seen in experimental data. The analysis provides an estimate of the critical stress and low-stress viscosity of dry SiO2 films. |
| doi_str_mv | 10.1063/1.101440 |
| format | Article |
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The analysis provides an estimate of the critical stress and low-stress viscosity of dry SiO2 films.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.101440</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville, NY: American Institute of Physics</publisher><subject>Condensed matter: structure, mechanical and thermal properties ; Exact sciences and technology ; Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties ; Physics ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><ispartof>Applied physics letters, 1989-01, Vol.54 (2), p.151-152</ispartof><rights>1990 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c254t-3ff79e2fc1c4028306df17835ce756a8fdf75d92cd07df4f4ac7b600da8194283</citedby><cites>FETCH-LOGICAL-c254t-3ff79e2fc1c4028306df17835ce756a8fdf75d92cd07df4f4ac7b600da8194283</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=6958299$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>RAFFERTY, C. 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A</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c254t-3ff79e2fc1c4028306df17835ce756a8fdf75d92cd07df4f4ac7b600da8194283</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1989</creationdate><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Exact sciences and technology</topic><topic>Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties</topic><topic>Physics</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>RAFFERTY, C. S</creatorcontrib><creatorcontrib>LANDSBERGER, L. M</creatorcontrib><creatorcontrib>DUTTON, R. W</creatorcontrib><creatorcontrib>TILLER, W. A</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>RAFFERTY, C. S</au><au>LANDSBERGER, L. M</au><au>DUTTON, R. W</au><au>TILLER, W. A</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Nonlinear viscoelastic dilation of SiO2 films</atitle><jtitle>Applied physics letters</jtitle><date>1989-01-09</date><risdate>1989</risdate><volume>54</volume><issue>2</issue><spage>151</spage><epage>152</epage><pages>151-152</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Oxide dilation in thin films is analyzed using a Voigt viscoelastic model. If stress-dependent viscosity is used to model the dilation, a logarithmic time evolution is predicted. The form of the solution is in agreement with the non-Maxwellian behavior seen in experimental data. The analysis provides an estimate of the critical stress and low-stress viscosity of dry SiO2 films.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.101440</doi><tpages>2</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 1989-01, Vol.54 (2), p.151-152 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_101440 |
| source | AIP Digital Archive |
| subjects | Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) |
| title | Nonlinear viscoelastic dilation of SiO2 films |
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