Nonlinear viscoelastic dilation of SiO2 films

Oxide dilation in thin films is analyzed using a Voigt viscoelastic model. If stress-dependent viscosity is used to model the dilation, a logarithmic time evolution is predicted. The form of the solution is in agreement with the non-Maxwellian behavior seen in experimental data. The analysis provide...

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Veröffentlicht in:	Applied physics letters 1989-01, Vol.54 (2), p.151-152
Hauptverfasser:	RAFFERTY, C. S, LANDSBERGER, L. M, DUTTON, R. W, TILLER, W. A
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties)
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Beschreibung
Zusammenfassung:	Oxide dilation in thin films is analyzed using a Voigt viscoelastic model. If stress-dependent viscosity is used to model the dilation, a logarithmic time evolution is predicted. The form of the solution is in agreement with the non-Maxwellian behavior seen in experimental data. The analysis provides an estimate of the critical stress and low-stress viscosity of dry SiO2 films.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.101440