Leakage mechanism for tungsten/chromium metallized silicon p/n junctions

The thermal stability of tungsten/chromium metallized silicon p/n junctions has been studied using several analytical techniques. A direct correlation has thus been established between junction leakage and structure. The main cause of leakage current observed after annealing at above 400 °C was foun...

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Veröffentlicht in:	Applied physics letters 1989-06, Vol.54 (24), p.2429-2431
Hauptverfasser:	GIORDANO, P, GONCHOND, J. P, OBERLIN, J. C, NORMANDON, P, BASSET, R, CHANTRE, A
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Interfaces Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Online-Zugang:	Volltext
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Zusammenfassung:	The thermal stability of tungsten/chromium metallized silicon p/n junctions has been studied using several analytical techniques. A direct correlation has thus been established between junction leakage and structure. The main cause of leakage current observed after annealing at above 400 °C was found to be the generation of film-edge-induced dislocations associated with chromium disilicide formation.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.101098