Band-gap shifts in silicon-germanium heterojunction bipolar transistors

The band gap of the base of Si1−xGex strained-layer base heterojunction bipolar transistors has been investigated using minority-carrier transport measurements. We have found a band-gap reduction of 131 meV for a base of Si0.82Ge0.18, which is in reasonable agreement with theoretical calculations. O...

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Veröffentlicht in:	Applied physics letters 1989-06, Vol.54 (26), p.2707-2709
Hauptverfasser:	STURM, J. C, PRINZ, E. J, GARONE, P. M, SCHWARTZ, P. V
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
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Zusammenfassung:	The band gap of the base of Si1−xGex strained-layer base heterojunction bipolar transistors has been investigated using minority-carrier transport measurements. We have found a band-gap reduction of 131 meV for a base of Si0.82Ge0.18, which is in reasonable agreement with theoretical calculations. Our measurements for a base of Si0.85Ge0.15 show a band-gap reduction less than predicted, suggesting a reduction of strain in the structure.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.101003