X-ray photoelectron spectroscopy of ammonium sulfide treated GaAs (100) surfaces

X-ray photoelectron spectroscopy of ammonium sulfide treated GaAs (100) surfaces

The effect of an ammonium sulfide treatment on the GaAs (100) surface has been investigated by x-ray photoelectron spectroscopy. The treatment produces a slight Ga enrichment on the surface and leaves roughly 0.6 of a monolayer of sulfide which inhibits initial oxidation of the surface. The sulfide...

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Veröffentlicht in:Appl. Phys. Lett.; (United States) 1989-01, Vol.54 (4), p.365-367
Hauptverfasser: COWANS, B. A, DARDAS, Z, DELGASS, W. N, CARPENTER, M. S, MELLOCH, M. R
Format: Artikel
Sprache:eng
Schlagworte:
AMMONIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BINDING ENERGY
CHALCOGENIDES
CHEMICAL COMPOSITION
CHEMICAL REACTIONS
Condensed matter: structure, mechanical and thermal properties
ELECTRICAL PROPERTIES
ELECTRON SPECTROSCOPY
ELECTRONIC STRUCTURE
ENERGY
ENERGY LEVELS
Exact sciences and technology
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
MATERIALS SCIENCE
OXIDATION
OXIDES
OXYGEN COMPOUNDS
PHOTOELECTRON SPECTROSCOPY
PHYSICAL PROPERTIES
Physics
PNICTIDES
S STATES
Solid surfaces and solid-solid interfaces
SPECTROSCOPY
SULFIDES
SULFUR COMPOUNDS 360603 > Materials-- Properties
SURFACE PROPERTIES
Surface structure and topography
SURFACE TREATMENTS
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
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Beschreibung
Zusammenfassung:The effect of an ammonium sulfide treatment on the GaAs (100) surface has been investigated by x-ray photoelectron spectroscopy. The treatment produces a slight Ga enrichment on the surface and leaves roughly 0.6 of a monolayer of sulfide which inhibits initial oxidation of the surface. The sulfide is not lost as the surface becomes oxidized but appears to remain near the GaAs/oxide interface. Furthermore, in the oxidized layer, As oxide is preferentially drawn to the surface relative to Ga oxide.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.100970