Preparation of TiN films by photochemical vapor deposition

The TiN films have been prepared by photochemical vapor deposition using a D2 lamp from a gas mixture of TiCl4 -NH3 (or N2) -H2. The deposition temperature of the TiN films was lowered by 50–100 °C by irradiation with a D2 lamp as compared to that without irradiation. The deposition rate was increas...

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Veröffentlicht in:	Applied physics letters 1989-03, Vol.54 (12), p.1104-1105
Hauptverfasser:	MOTOJIMA, S, MIZUTANI, H
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Physics
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Beschreibung
Zusammenfassung:	The TiN films have been prepared by photochemical vapor deposition using a D2 lamp from a gas mixture of TiCl4 -NH3 (or N2) -H2. The deposition temperature of the TiN films was lowered by 50–100 °C by irradiation with a D2 lamp as compared to that without irradiation. The deposition rate was increased by 35–300% with irradiation.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.100771