Broadband tunability of gain-flattened quantum well semiconductor lasers with an external grating

Quantum well lasers are shown to exhibit flattened broadband gain spectra at a particular pumping condition. The gain requirement for a grating-tuned external cavity configuration is examined and applied to a semiconductor quantum well laser with an optimized length of gain region. The predicted ver...

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Veröffentlicht in:Appl. Phys. Lett.; (United States) 1989-03, Vol.54 (12), p.1092-1094
Hauptverfasser: MITTELSTEIN, M, MEHUYS, D, YARIV, A, UNGAR, J. E, SARFATY, R
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Sprache:eng
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Zusammenfassung:Quantum well lasers are shown to exhibit flattened broadband gain spectra at a particular pumping condition. The gain requirement for a grating-tuned external cavity configuration is examined and applied to a semiconductor quantum well laser with an optimized length of gain region. The predicted very broadband tunability of quantum well lasers is confirmed experimentally by grating-tuning of uncoated lasers over 85 nm, with single longitudinal mode output power exceeding 200 mW.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.100767