Fermi level movement at the Cs/GaAs (110) interfaces

Fermi level (Ef ) movement and overlayer metallization at room temperature (RT) and 110 K low-temperature (LT) Cs/GaAs (110) interfaces are studied using photoemission. Initial p-type GaAs band bending is attributed to the surface donor states that originate from Cs atom chemisorption. The Ef stabil...

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Veröffentlicht in:	Applied physics letters 1989-03, Vol.54 (13), p.1250-1252
Hauptverfasser:	RENYU CAO, MIYANO, K, KENDELEWICZ, T, LINDAU, I, SPICER, W. E
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Exact sciences and technology Physics Surface and interface electron states
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