Fermi level movement at the Cs/GaAs (110) interfaces

Fermi level movement at the Cs/GaAs (110) interfaces

Fermi level (Ef ) movement and overlayer metallization at room temperature (RT) and 110 K low-temperature (LT) Cs/GaAs (110) interfaces are studied using photoemission. Initial p-type GaAs band bending is attributed to the surface donor states that originate from Cs atom chemisorption. The Ef stabil...

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Veröffentlicht in:Applied physics letters 1989-03, Vol.54 (13), p.1250-1252
Hauptverfasser: RENYU CAO, MIYANO, K, KENDELEWICZ, T, LINDAU, I, SPICER, W. E
Format: Artikel
Sprache:eng
Schlagworte:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Physics
Surface and interface electron states
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Zusammenfassung:Fermi level (Ef ) movement and overlayer metallization at room temperature (RT) and 110 K low-temperature (LT) Cs/GaAs (110) interfaces are studied using photoemission. Initial p-type GaAs band bending is attributed to the surface donor states that originate from Cs atom chemisorption. The Ef stabilization at RT and LT is interpreted in terms of defects and the metal-induced gap states and the interplay between them. For the latter to dominate, fewer defects and establishment of overlayer metallicity are necessary.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.100730