Low-energy ion-enhanced deposition of SiO2 in rf magnetron plasmas
A novel low-temperature (
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| Veröffentlicht in: | Applied physics letters 1988-11, Vol.53 (21), p.2030-2032 |
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| container_end_page | 2032 |
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| container_issue | 21 |
| container_start_page | 2030 |
| container_title | Applied physics letters |
| container_volume | 53 |
| creator | I, L TING, L. W |
| description | A novel low-temperature ( |
| doi_str_mv | 10.1063/1.100493 |
| format | Article |
| fullrecord | <record><control><sourceid>pascalfrancis_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_100493</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>7326377</sourcerecordid><originalsourceid>FETCH-LOGICAL-c256t-ac1cd950b0b48cac767df2d72eef96d173f42404549184388559984dc373a72f3</originalsourceid><addsrcrecordid>eNo9j0tLxDAUhYMoWEfBn5CFCzfVJDdpkqUOjgqFWajrksljjEwfJAWZf2-k4uqce_i48CF0TckdJQ3c0xKEazhBFSVS1kCpOkUVIQTqRgt6ji5y_iqnYAAVemzH79oPPu2POI5DqZ9msN5h56cxx7lseAz4LW4ZjgNOAfdmP_g5lX06mNybfInOgjlkf_WXK_SxeXpfv9Tt9vl1_dDWlolmro2l1mlBdmTHlTVWNtIF5iTzPujGUQmBM0644JoqDkoJobXizoIEI1mAFbpd_to05px86KYUe5OOHSXdr3tHu8W9oDcLOplszSGk4hTzPy-BNSAl_AABsFa4</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Low-energy ion-enhanced deposition of SiO2 in rf magnetron plasmas</title><source>AIP Digital Archive</source><creator>I, L ; TING, L. W</creator><creatorcontrib>I, L ; TING, L. W</creatorcontrib><description>A novel low-temperature (<50 °C) deposition process of a thin SiO2 film in a low-energy ‘‘rf hollow oval magnetron’’ system was studied. O2 is directly mixed with SiH4 and Ar for deposition under the low pressure (≲10 mTorr). The high electron density (1011 cm−3 ) and the high flux low energy (30 eV) ion bombardment greatly enhance the gas phase and surface processes. Uniform and dense thin films with smooth surface and good adhesion have been obtained. The film stoichiometry (from Si to SiO2), the index of refraction, and the film growth rate (from 1 to 35 Å/s) can be controlled by adjusting the SiH4 /O2 flow rates and their ratio.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.100493</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville, NY: American Institute of Physics</publisher><subject>Condensed matter: structure, mechanical and thermal properties ; Exact sciences and technology ; Physics ; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) ; Thin film structure and morphology</subject><ispartof>Applied physics letters, 1988-11, Vol.53 (21), p.2030-2032</ispartof><rights>1989 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c256t-ac1cd950b0b48cac767df2d72eef96d173f42404549184388559984dc373a72f3</citedby><cites>FETCH-LOGICAL-c256t-ac1cd950b0b48cac767df2d72eef96d173f42404549184388559984dc373a72f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=7326377$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>I, L</creatorcontrib><creatorcontrib>TING, L. W</creatorcontrib><title>Low-energy ion-enhanced deposition of SiO2 in rf magnetron plasmas</title><title>Applied physics letters</title><description>A novel low-temperature (<50 °C) deposition process of a thin SiO2 film in a low-energy ‘‘rf hollow oval magnetron’’ system was studied. O2 is directly mixed with SiH4 and Ar for deposition under the low pressure (≲10 mTorr). The high electron density (1011 cm−3 ) and the high flux low energy (30 eV) ion bombardment greatly enhance the gas phase and surface processes. Uniform and dense thin films with smooth surface and good adhesion have been obtained. The film stoichiometry (from Si to SiO2), the index of refraction, and the film growth rate (from 1 to 35 Å/s) can be controlled by adjusting the SiH4 /O2 flow rates and their ratio.</description><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Thin film structure and morphology</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1988</creationdate><recordtype>article</recordtype><recordid>eNo9j0tLxDAUhYMoWEfBn5CFCzfVJDdpkqUOjgqFWajrksljjEwfJAWZf2-k4uqce_i48CF0TckdJQ3c0xKEazhBFSVS1kCpOkUVIQTqRgt6ji5y_iqnYAAVemzH79oPPu2POI5DqZ9msN5h56cxx7lseAz4LW4ZjgNOAfdmP_g5lX06mNybfInOgjlkf_WXK_SxeXpfv9Tt9vl1_dDWlolmro2l1mlBdmTHlTVWNtIF5iTzPujGUQmBM0644JoqDkoJobXizoIEI1mAFbpd_to05px86KYUe5OOHSXdr3tHu8W9oDcLOplszSGk4hTzPy-BNSAl_AABsFa4</recordid><startdate>19881121</startdate><enddate>19881121</enddate><creator>I, L</creator><creator>TING, L. W</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19881121</creationdate><title>Low-energy ion-enhanced deposition of SiO2 in rf magnetron plasmas</title><author>I, L ; TING, L. W</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c256t-ac1cd950b0b48cac767df2d72eef96d173f42404549184388559984dc373a72f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1988</creationdate><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Exact sciences and technology</topic><topic>Physics</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Thin film structure and morphology</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>I, L</creatorcontrib><creatorcontrib>TING, L. W</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>I, L</au><au>TING, L. W</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Low-energy ion-enhanced deposition of SiO2 in rf magnetron plasmas</atitle><jtitle>Applied physics letters</jtitle><date>1988-11-21</date><risdate>1988</risdate><volume>53</volume><issue>21</issue><spage>2030</spage><epage>2032</epage><pages>2030-2032</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>A novel low-temperature (<50 °C) deposition process of a thin SiO2 film in a low-energy ‘‘rf hollow oval magnetron’’ system was studied. O2 is directly mixed with SiH4 and Ar for deposition under the low pressure (≲10 mTorr). The high electron density (1011 cm−3 ) and the high flux low energy (30 eV) ion bombardment greatly enhance the gas phase and surface processes. Uniform and dense thin films with smooth surface and good adhesion have been obtained. The film stoichiometry (from Si to SiO2), the index of refraction, and the film growth rate (from 1 to 35 Å/s) can be controlled by adjusting the SiH4 /O2 flow rates and their ratio.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.100493</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 1988-11, Vol.53 (21), p.2030-2032 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_100493 |
| source | AIP Digital Archive |
| subjects | Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology |
| title | Low-energy ion-enhanced deposition of SiO2 in rf magnetron plasmas |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-18T20%3A29%3A43IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Low-energy%20ion-enhanced%20deposition%20of%20SiO2%20in%20rf%20magnetron%20plasmas&rft.jtitle=Applied%20physics%20letters&rft.au=I,%20L&rft.date=1988-11-21&rft.volume=53&rft.issue=21&rft.spage=2030&rft.epage=2032&rft.pages=2030-2032&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.100493&rft_dat=%3Cpascalfrancis_cross%3E7326377%3C/pascalfrancis_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |