Work hardening and strain relaxation in strained-layer buffers

Fully relaxed buffer layers are of considerable importance for growth of high quality crystals on substrates having different lattice parameters. Recent experiments by Biefeld et al. [R. M. Biefeld, C. R. Hills, and S. R. Lee, J. Cryst. Growth (in press)] in the InAsSb system show that the degree of...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Appl. Phys. Lett.; (United States) 1988-07, Vol.53 (1), p.37-38
1. Verfasser:	DODSON, B. W
Format:	Artikel
Sprache:	eng
Schlagworte:	360603 - Materials- Properties ANTIMONY COMPOUNDS ARSENIC COMPOUNDS ARSENIDES Condensed matter: structure, mechanical and thermal properties CRYSTAL DEFECTS CRYSTAL STRUCTURE DISLOCATIONS Exact sciences and technology FABRICATION HARDENING INDIUM ARSENIDES INDIUM COMPOUNDS LATTICE PARAMETERS LINE DEFECTS MATERIALS SCIENCE Physics PNICTIDES RELAXATION STRAINS STRESS RELAXATION SUPERLATTICES Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!