Work hardening and strain relaxation in strained-layer buffers
Fully relaxed buffer layers are of considerable importance for growth of high quality crystals on substrates having different lattice parameters. Recent experiments by Biefeld et al. [R. M. Biefeld, C. R. Hills, and S. R. Lee, J. Cryst. Growth (in press)] in the InAsSb system show that the degree of...
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Veröffentlicht in: | Appl. Phys. Lett.; (United States) 1988-07, Vol.53 (1), p.37-38 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Fully relaxed buffer layers are of considerable importance for growth of high quality crystals on substrates having different lattice parameters. Recent experiments by Biefeld et al. [R. M. Biefeld, C. R. Hills, and S. R. Lee, J. Cryst. Growth (in press)] in the InAsSb system show that the degree of relaxation is considerably less than expected using conventional equilibrium models, but is more complete in continuously graded than in step-graded buffer layers. In the present letter, this observation is explained in terms of Taylor-type (dislocation interaction) work hardening. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.100115 |