Work hardening and strain relaxation in strained-layer buffers
Fully relaxed buffer layers are of considerable importance for growth of high quality crystals on substrates having different lattice parameters. Recent experiments by Biefeld et al. [R. M. Biefeld, C. R. Hills, and S. R. Lee, J. Cryst. Growth (in press)] in the InAsSb system show that the degree of...
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| Veröffentlicht in: | Appl. Phys. Lett.; (United States) 1988-07, Vol.53 (1), p.37-38 |
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| container_title | Appl. Phys. Lett.; (United States) |
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| creator | DODSON, B. W |
| description | Fully relaxed buffer layers are of considerable importance for growth of high quality crystals on substrates having different lattice parameters. Recent experiments by Biefeld et al. [R. M. Biefeld, C. R. Hills, and S. R. Lee, J. Cryst. Growth (in press)] in the InAsSb system show that the degree of relaxation is considerably less than expected using conventional equilibrium models, but is more complete in continuously graded than in step-graded buffer layers. In the present letter, this observation is explained in terms of Taylor-type (dislocation interaction) work hardening. |
| doi_str_mv | 10.1063/1.100115 |
| format | Article |
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Lett.; (United States)</jtitle><date>1988-07-04</date><risdate>1988</risdate><volume>53</volume><issue>1</issue><spage>37</spage><epage>38</epage><pages>37-38</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Fully relaxed buffer layers are of considerable importance for growth of high quality crystals on substrates having different lattice parameters. Recent experiments by Biefeld et al. [R. M. Biefeld, C. R. Hills, and S. R. Lee, J. Cryst. Growth (in press)] in the InAsSb system show that the degree of relaxation is considerably less than expected using conventional equilibrium models, but is more complete in continuously graded than in step-graded buffer layers. In the present letter, this observation is explained in terms of Taylor-type (dislocation interaction) work hardening.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.100115</doi><tpages>2</tpages></addata></record> |
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| ispartof | Appl. Phys. Lett.; (United States), 1988-07, Vol.53 (1), p.37-38 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_100115 |
| source | AIP Digital Archive |
| subjects | 360603 - Materials- Properties ANTIMONY COMPOUNDS ARSENIC COMPOUNDS ARSENIDES Condensed matter: structure, mechanical and thermal properties CRYSTAL DEFECTS CRYSTAL STRUCTURE DISLOCATIONS Exact sciences and technology FABRICATION HARDENING INDIUM ARSENIDES INDIUM COMPOUNDS LATTICE PARAMETERS LINE DEFECTS MATERIALS SCIENCE Physics PNICTIDES RELAXATION STRAINS STRESS RELAXATION SUPERLATTICES Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology |
| title | Work hardening and strain relaxation in strained-layer buffers |
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