Growth of highly strained InGaAs on GaAs

The early stages of the molecular beam epitaxial growth of InxGa1−xAs on GaAs have been studied with reflection high-energy electron diffraction. Measurement of the in-plane surface lattice constant as a function of film thickness clearly showed a pseudomorphic to incoherent transition. Changes in t...

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Veröffentlicht in:	Applied physics letters 1988-10, Vol.53 (14), p.1288-1290
1. Verfasser:	PRICE, G. L
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
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Zusammenfassung:	The early stages of the molecular beam epitaxial growth of InxGa1−xAs on GaAs have been studied with reflection high-energy electron diffraction. Measurement of the in-plane surface lattice constant as a function of film thickness clearly showed a pseudomorphic to incoherent transition. Changes in the diffraction streaks indicated a corresponding two- to three-dimensional growth transition. The results are compared with various models of dislocation nucleation and good support is found for heterogeneous misfit accommodation by 60° dislocations.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.100000